Md. Nur Kutubul AlamLecturer
Department of Electrical and Electronic Engineering
Khulna University of Engineering & Technology (KUET)
Khulna -9203, Bangladesh. Phone: +88-041-769468-75-Ext: 309
Cell: +880 1911 353008, Fax: +88-041-774403, Mail : [email protected]
Website : www.kuet.ac.bd/eee/kutubul/
International Journal
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Please see my profile at, "Researchgate", (Which is the social network of researchers), www.researchgate.net/profile/Md_Nur_Alam |
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Md Nur, Kutubul Alam, Muhammad Shaffatul Islam, Golam Kibria, Md Rafiqul Islam, "Anomalous Staircase CV Characteristics of InGaSb-on-Insulator FET", IEEE Transaction on Electron Devices, 2014 ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6912937&queryText%3Danamolous+stairca |
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Lubna Jahan Rashid Pinky, Shakila Islam, Md. Nur Kutubul Alam, Mohammad Arif Hossain, Md. Rafiqul Islam, "Modeling of Orientation-Dependent Photoelastic Constants in Cubic Crystal System", Materials Sciences and Applications, Scientific Research , vol. 5, issue 4, pp. 223-230, 2014 www.scirp.org/journal/PaperInformation.aspx?PaperID=44379#.U--b4PldVog |
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Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "InxGa1-xSb n-channel MOSFET: Effect of interface states on CV characteristics", International Journal of Nanotechnology, Inderscience Publishers, vol. Forthcoming articles, 2013 inderscience.com/info/inarticle.php?artid=59812 [PDF] |
International Conference
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Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "Effect of gate length on the ballistic performance of nanoscale InGaSb double gate MOSFET", 2014 International Conference on Informatics, Electronics & Vision (ICIEV), IEEE, pp.1-4, 24 May 2014 ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6850707&queryText%3DEffect+of+gate+le |
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Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET", EDSSC-2013, IEEE, Hong Kong, pp.2, 5/6/2013 ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6628047&queryText%3DXOI+CV |
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Md. Nur Kutubul Alam, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Capacitance-Voltage characterization of InAsySb1−y XOI FET", EDSSC-2013, IEEE, Hong Kong, pp.2, 5/6/2013 ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6628046&queryText%3DXOI+CV |
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Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "InxGa1-xSb n-channel MOSFET: Effect of Interface States on C-V Characteristics", IEEE International Nanoelectronics Conference, Singapore, ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6465996&queryText%3DInxGa1-xSb+n-chan |
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Muhammad Shaffatul Islam, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "Self-Consistent Quasi Static CV Characterization of InxGa1-xSb Buried Channel n-MOSFET", IEEE International Nanoelectronics Conference, Singapore, ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6465964&queryText%3DSelf-Consistent+Q |
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Muhammad Shaffatul Islam, Md. Osman Goni Nayeem, Md. Nur Kutubul Alam, Md. Rafiqul Islam, "InGaSb based n-MOSFET: Modeling and Performance Analysis", International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6471637&queryText%3DInGaSb+based+n-MO |
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Md. Nur Kutubul Alam, Md. Osman Goni Nayeem, Muhammad Shaffatul Islam, Md. Rafiqul Islam, "Ultra High-Current-Gain InxGa1-xSb-based DHBT With Compositional Graded Base", International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6471671&queryText%3DUltra+High-Curren |